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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3 package *High breakdown voltage *High power dissipation APPLICATIONS *Switching regulator *Inverters *Power amplifiers *Deflection circuits *High-voltage bridge amplifiers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5239 Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Tc=25 CONDITIONS Open emitter Open base Open collector VALUE 300 225 6 5 2 100 200 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.75 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=0.2A ; IB=0 IE=20mA ; IC=0 IC=2A; IB=0.25A IC=4.5A; IB=1.125A IC=2A ; VCE=10V VCE=300V; VBE=-1.5V TC=150 VCE=200V; IB=0 VEB=5V; IC=0 IC=0.4A ; VCE=10V 20 hFE -2 hFE-3 COB fT IC=2A ; VCE=10V IC=4.5A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IC=0.2A ; VCE=10V 2 5 MIN 225 6 2N5239 SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBE ICEV ICEO IEBO hFE-1 TYP. MAX UNIT V V 2.5 5.0 3.0 4.0 5.0 5.0 5.0 V V V mA mA mA 80 250 pF MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5239 Fig.2 Outline dimensions 3 |
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